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| SGM2N60UF IGBT SGM2N60UF Ultrafast IGBT General Description Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features * High speed switching * Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2A * High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. D C S G G E SOT-223 Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25C Collector Current @ TC = 100C Pulsed Collector Current Maximum Power Dissipation @ Ta = 25C - Derate above 25C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds SGM2N60UF 600 20 2.4 1.2 10 2.1 0.017 -55 to +150 -55 to +150 300 Units V V A A A W W/C C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. -Max. 60 Units C/W Notes : (2) Mounted on 1" squre PCB (FR4 or G-10 Material) (c)2003 Fairchild Semiconductor Corporation SGM2N60UF Rev.A SGM2N60UF Electrical Characteristics of the IGBT T Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 1.2mA, VCE = VGE IC = 1.2A, VGE = 15V IC = 2.4A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---98 18 4 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------15 20 80 95 30 13 43 19 24 115 176 36 27 63 9 3 1.5 7.5 --130 160 --70 --200 250 --100 14 5 3 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH VCC = 300 V, IC = 1.2A, RG = 200, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 1.2A, RG = 200, VGE = 15V, Inductive Load, TC = 125C VCE = 300 V, IC = 1.2A, VGE = 15V Measured 5mm from PKG (c)2003 Fairchild Semiconductor Corporation SGM2N60UF Rev. A SGM2N60UF 12 Common Emitter T C = 25 C 10 o 6 20V 5 15V Common Emitter V GE = 15V T C = 25 C T C = 125 C o o Collector Current, IC [A] Collector Current, I C [A] 8 12V 6 V GE = 10V 4 4 3 2 2 1 0 0 2 4 6 8 0 0.5 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4 3.0 Common Emitter V GE = 15V 2.5 2.4A V CC = 300V Load Current : peak of square wave Collector - Emitter Voltage, V [V] CE 3 Load Current [A] 2.0 1.2A 2 I C = 0.6A 1 1.5 1.0 0.5 Duty cycle : 50% T C = 100 C Power Dissipation = 4W 0.1 1 10 100 1000 o 0 0 30 60 90 o 0.0 120 150 Case Temperature, TC [ C] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25 C o 20 Common Emitter T C = 125 C o Collector - Emitter Voltage, VCE [V] 16 Collector - Emitter Voltage, V CE [V] 16 12 12 8 8 2.4A 4 IC = 0.6A 0 1.2A 4 IC = 0.6A 1.2A 2.4A 0 0 4 8 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE (c)2003 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGM2N60UF Rev. A SGM2N60UF 160 Common Emitter V GE = 0V, f = 1MHz o T C = 25 C Cies 100 Common Emitter VCC = 300V, V GE = +15V IC = 1.2A TC = 25 C TC = 125 C o o 120 Capacitance [pF] 80 Coes 40 Cres 0 1 10 30 Switching Time [ns] Ton Tr 10 10 100 500 Collector - Emitter Voltage, VCE [V] Gate Resistance, RG [] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 600 Common Emitter V CC = 300V, V GE = +15V IC = 1.2A T C = 25 C o o 100 Common Emitter VCC = 300V, V GE = +15V IC = 1.2A TC = 25 C Toff TC = 125 C o o Switching Time [ns] T C = 125 C Switching Loss [uJ] Eon Eoff Tf Toff 100 Eoff Tf 10 50 10 100 500 5 10 100 500 Gate Resistance, RG [] Gate Resistance, RG [] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 100 Common Emitter VCC = 300V, V GE = +15V RG = 200 1000 Common Emitter V CC = 300V, V GE = +15V R G = 200 T C = 25 C o o Switching Time [ns] Switching Time [ns] TC = 25 C o TC = 125 C o T C = 125 C Toff Toff Tf Tf Ton Tr 100 10 0.5 1.0 1.5 2.0 2.5 0.5 1.0 1.5 2.0 2.5 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current (c)2003 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGM2N60UF Rev. A SGM2N60UF 100 Common Emitter V CC = 300V, V GE = +15V R G = 200 15 Common Emitter RL = 250 Gate - Emitter Voltage, V GE [ V ] Tc = 25 C 12 o T C = 25 C o o Switching Loss [uJ] T C = 125 C 9 300 V 6 VCE = 100 V 3 200 V Eon Eon Eoff 10 Eoff 0.5 1.0 1.5 2.0 2.5 0 0 2 4 6 8 10 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 20 10 IC MAX. (Pulsed) 10 50s [A] 100s 1 Collector Current, I C 1 0.1 DC Operation Collector Current, I C [A] IC MAX. (Continuous) 1 0.01 1E-3 Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature Safe Operating Area V GE=20V, T C=100 C o 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 0.1 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 10 2 T h e r m a l R e s p o n s e , / Wt ] jc [ CZh D = 0 .5 0 .2 10 1 0 .1 0 .0 5 0 .0 2 o 10 0 0 .0 1 Pdm t1 s i n g le p u l s e t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 10 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 R e c t a n g u la r P u ls e D u r a t io n [ s e c ] Fig 17. Transient Thermal Impedance of IGBT (c)2003 Fairchild Semiconductor Corporation SGM2N60UF Rev. A SGM2N60UF Package Dimension SOT-223 0.08MAX 3.00 0.10 MAX1.80 1.75 0.20 3.50 0.20 (0.60) 0.65 0.20 +0.04 0.06 -0.02 2.30 TYP (0.95) 4.60 0.25 0.70 0.10 (0.95) +0.10 0.25 -0.05 (0.60) 0~ 10 1.60 0.20 (0.46) (0.89) 6.50 0.20 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation SGM2N60UF Rev. A 7.00 0.30 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FRFETTM CoolFETTM CROSSVOLTTM GlobalOptoisolatorTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2003 Fairchild Semiconductor Corporation Rev. I5 |
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